PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

Authors

Keywords

Journal

Volume 60, Issue 3, Pages 1082-1087

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2013-02-13

DOI

10.1109/ted.2013.2242075

References

View 5 related references

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discuss science. Find collaborators. Network.

Join a conversation