Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Published 2013 View Full Article

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Title
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
Authors
Keywords
Deep Level Transient Spectroscopy, Deep Level Transient Spectroscopy Spectrum, Negative Conductance, Deep Level Transient Spectroscopy Measurement, HEMT Device
Journal
SEMICONDUCTORS
Volume 47, Issue 7, Pages 1008-1012
Publisher
Pleiades Publishing Ltd
Online
2013-07-05
DOI
10.1134/s1063782613070087
References
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