High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template

(2014) Takuji Arauchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

(2013) H. F. Liu et al.   JOURNAL OF APPLIED PHYSICS

Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

(2013) S. Çörekçi et al.   SEMICONDUCTORS

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

(2013) Wenliang Wang et al.   Journal of Materials Chemistry C

X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

(2010) James Tweedie et al.   JOURNAL OF APPLIED PHYSICS

X-ray analysis of ZnO nanoparticles by Williamson–Hall and size–strain plot methods

(2010) A. Khorsand Zak et al.   SOLID STATE SCIENCES

Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer

(2010) M. K. Öztürk et al.   STRAIN

Determination of the composition of InxGa1−xN from strain measurements

(2009) F.M. Morales et al.   ACTA MATERIALIA

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

(2009) V. Tasco et al.   JOURNAL OF APPLIED PHYSICS

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

(2009) V. P. Kladko et al.   JOURNAL OF APPLIED PHYSICS

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

(2008) Engin Arslan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS