Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

(2010) James R. Grandusky et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Polarization properties in deep-ultraviolet AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

(2009) Hirotoshi Tsuzuki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

(2009) R. G. Banal et al.   PHYSICAL REVIEW B

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics