Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

(2011) Ryan G. Banal et al.   APPLIED PHYSICS LETTERS

Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes

(2011) H. M. Lu et al.   JOURNAL OF APPLIED PHYSICS

Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes

(2011) K. Kojima et al.   JOURNAL OF APPLIED PHYSICS

Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures

(2011) Seoung-Hwan Park   JOURNAL OF APPLIED PHYSICS

Strain-driven light-polarization switching in deep ultraviolet nitride emitters

(2011) T. K. Sharma et al.   PHYSICAL REVIEW B

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers

(2010)   JOURNAL OF APPLIED PHYSICS

Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain

(2009) Deyi Fu et al.   JOURNAL OF APPLIED PHYSICS

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective

(2009) Jayeeta Bhattacharyya et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

(2009) R. G. Banal et al.   PHYSICAL REVIEW B

Spontaneous luminescence polarizations of wurtzite InGaN∕GaN quantum wells

(2008) Chuanyu Jia et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS