Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

Published 2013 View Full Article

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Title
Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers
Authors
Keywords
-
Journal
IEEE Photonics Journal
Volume 5, Issue 4, Pages 8200309-8200309
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-07-04
DOI
10.1109/jphot.2013.2271718

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