Effect of carbon on dopant–vacancy pair stability in germanium

Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus

(2011) Jeehwan Kim et al.   APPLIED PHYSICS LETTERS

Fluorine effect on As diffusion in Ge

(2011) G. Impellizzeri et al.   JOURNAL OF APPLIED PHYSICS

Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry

(2010) D. Tsoutsou et al.   JOURNAL OF APPLIED PHYSICS

Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium

(2010) P. Tsouroutas et al.   JOURNAL OF APPLIED PHYSICS

E centers in ternary Si1−x−yGexSny random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Defect interactions in Sn1−xGex random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Lattice location study of implanted In in Ge

(2009) S. Decoster et al.   JOURNAL OF APPLIED PHYSICS

Impact of germanium on vacancy clustering in germanium-doped silicon

(2009) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of indium in germanium

(2009) R. Kube et al.   JOURNAL OF APPLIED PHYSICS

Ga-implantation in Ge: Electrical activation and clustering

(2009) G. Impellizzeri et al.   JOURNAL OF APPLIED PHYSICS

Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

(2009) A. Chroneos   JOURNAL OF APPLIED PHYSICS

Mechanism of B diffusion in crystalline Ge under proton irradiation

(2009) E. Bruno et al.   PHYSICAL REVIEW B

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

The vacancy in silicon: A critical evaluation of experimental and theoretical results

(2008) Hartmut Bracht et al.   JOURNAL OF APPLIED PHYSICS

Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

(2008) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS

Phosphorous clustering in germanium-rich silicon germanium

(2008) A. Chroneos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

(2008) S. Brotzmann et al.   PHYSICAL REVIEW B