Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

(2008) Miki Naganawa et al.   APPLIED PHYSICS LETTERS

Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss

(2008) N. Ioannou et al.   APPLIED PHYSICS LETTERS

The vacancy in silicon: A critical evaluation of experimental and theoretical results

(2008) Hartmut Bracht et al.   JOURNAL OF APPLIED PHYSICS

Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

(2008) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS

Phosphorous clustering in germanium-rich silicon germanium

(2008) A. Chroneos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

(2008) S. Brotzmann et al.   PHYSICAL REVIEW B