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Title
Fluorine effect on As diffusion in Ge
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 11, Pages 113527
Publisher
AIP Publishing
Online
2011-06-09
DOI
10.1063/1.3592962
References
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Related references
Note: Only part of the references are listed.- Ion implantation damage and crystalline-amorphous transition in Ge
- (2010) G. Impellizzeri et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
- (2010) E. Napolitani et al. APPLIED PHYSICS LETTERS
- Interaction of A-centers with isovalent impurities in silicon
- (2010) A. Chroneos et al. JOURNAL OF APPLIED PHYSICS
- Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
- (2010) M. Mastromatteo et al. PHYSICAL REVIEW B
- Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si
- (2009) D. De Salvador et al. APPLIED PHYSICS LETTERS
- Fluorine codoping in germanium to suppress donor diffusion and deactivation
- (2009) A. Chroneos et al. JOURNAL OF APPLIED PHYSICS
- Intrinsic and extrinsic diffusion of indium in germanium
- (2009) R. Kube et al. JOURNAL OF APPLIED PHYSICS
- End of range defects in Ge
- (2009) S. Koffel et al. JOURNAL OF APPLIED PHYSICS
- Ga-implantation in Ge: Electrical activation and clustering
- (2009) G. Impellizzeri et al. JOURNAL OF APPLIED PHYSICS
- Vacancy-mediated dopant diffusion activation enthalpies for germanium
- (2008) A. Chroneos et al. APPLIED PHYSICS LETTERS
- Formation and evolution of F nanobubbles in amorphous and crystalline Si
- (2008) S. Boninelli et al. APPLIED PHYSICS LETTERS
- Activation and carrier mobility in high fluence B implanted germanium
- (2008) S. Mirabella et al. APPLIED PHYSICS LETTERS
- Si interstitial contribution of F+ implants in crystalline Si
- (2008) Pedro López et al. JOURNAL OF APPLIED PHYSICS
- Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
- (2008) Sergej Brotzmann et al. JOURNAL OF APPLIED PHYSICS
- High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
- (2008) G. Bisognin et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations
- (2008) A. Chroneos et al. PHYSICAL REVIEW B
- Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
- (2008) A. Chroneos et al. PHYSICAL REVIEW B
- Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
- (2008) S. Brotzmann et al. PHYSICAL REVIEW B
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