E centers in ternary Si1−x−yGexSny random alloys

Defect interactions in Sn1−xGex random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

(2009) V. R. D’Costa et al.   PHYSICAL REVIEW LETTERS

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

The vacancy in silicon: A critical evaluation of experimental and theoretical results

(2008) Hartmut Bracht et al.   JOURNAL OF APPLIED PHYSICS

Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

(2008) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B