Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure
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Title
Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure
Authors
Keywords
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Journal
RSC Advances
Volume 5, Issue 107, Pages 88166-88170
Publisher
Royal Society of Chemistry (RSC)
Online
2015-10-06
DOI
10.1039/c5ra15993h
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