标题
Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure
作者
关键词
-
出版物
RSC Advances
Volume 5, Issue 107, Pages 88166-88170
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-10-06
DOI
10.1039/c5ra15993h
参考文献
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