Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

(2013) S. P. Pavunny et al.   APPLIED PHYSICS LETTERS

Properties of the new electronic device material LaGdO3

(2013) Shojan P. Pavunny et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

(2013) Sean W. King et al.   APL Materials

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

(2012) S. P. Pavunny et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of amorphous high-k LaGdO3 films and its band alignment with Si

(2012) S. P. Pavunny et al.   JOURNAL OF APPLIED PHYSICS

Optical Dielectric Function Modeling and Electronic Band Lineup Estimation of Amorphous High-k LaGdO3Films

(2012) S. P. Pavunny et al.   ECS Journal of Solid State Science and Technology

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

(2011) S. P. Pavunny et al.   INTEGRATED FERROELECTRICS

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

(2010) Takashi Ando et al.   APPLIED PHYSICS LETTERS

Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

(2010) T. Bertaud et al.   IEEE ELECTRON DEVICE LETTERS