Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

CVD-derived Hf-based High-k Gate Dielectrics

(2013) Gang He et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks

(2013) Baojun Tang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

(2013) S. Mather et al.   MICROELECTRONIC ENGINEERING

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

(2013) Chun Zhao et al.   Nanoscale Research Letters

Dielectric relaxation of high-k oxides

(2013) Chun Zhao et al.   Nanoscale Research Letters

Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors

(2012) Andrian P. Milanov et al.   DALTON TRANSACTIONS

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

(2012) B. Benbakhti et al.   IEEE ELECTRON DEVICE LETTERS

Defect Loss: A New Concept for Reliability of MOSFETs

(2012) M. Duan et al.   IEEE ELECTRON DEVICE LETTERS

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

(2012) Paul R. Chalker et al.   JOURNAL OF MATERIALS CHEMISTRY

Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models

(2012) Chun Zhao et al.   Journal of Nanomaterials

Thermal Stability of Neodymium Aluminates High-κDielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors

(2012) P. Taechakumput et al.   Journal of Nanomaterials

Atomic layer deposition of Ti-HfO2 dielectrics

(2012) Matthew Werner et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

(2012) Yi Zhao   Materials

Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

(2012) Glyn J. Reynolds et al.   Materials

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

(2012) Glyn J. Reynolds et al.   Materials

Study of Direct-Contact HfO2/Si Interfaces

(2012) Noriyuki Miyata   Materials

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

(2012) Masamichi Suzuki   Materials

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

(2012) J. Tao et al.   Materials

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

(2011) George Adamopoulos et al.   ADVANCED MATERIALS

SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

(2011) L. Yan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

(2011) George Adamopoulos et al.   APPLIED PHYSICS LETTERS

Electron Trapping in HfAlO High-$\kappa$ Stack for Flash Memory Applications: An Origin of $V_{\rm th}$ Window Closure During Cycling Operations

(2011) Xue Feng Zheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2

(2011) Helen C. Aspinall et al.   INORGANIC CHEMISTRY

Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

(2011) Ghader Darbandy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition

(2011) P.J. King et al.   THIN SOLID FILMS

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- $\kappa$ Materials for Flash Memory Application

(2010) Xue Feng Zheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

(2010) C. Z. Zhao et al.   Nanoscale Research Letters

Memory characteristics and the tunneling mechanism of Au nanocrystals embedded in a DyScO3high-kgate dielectric layer

(2010) K C Chan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Catalytic oxidation of diesel soot: New characterization and kinetic evidence related to the reaction mechanism on K/CeO2 catalyst

(2009) Martín S. Gross et al.   APPLIED CATALYSIS A-GENERAL

Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

(2009) Xue Feng Zheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Dielectric relaxation of lanthanum doped zirconium oxide

(2009) C. Z. Zhao et al.   JOURNAL OF APPLIED PHYSICS

Frequency dispersion and dielectric relaxation of La[sub 2]Hf[sub 2]O[sub 7]

(2009) C. Z. Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

High-k materials and their response to gamma ray radiation

(2009) C. Z. Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium

(2009) C Mahata et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Thermal Conductivity of Diamond Composites

(2009) Sergey Kidalov et al.   Materials

Two-Pulse $C$–$V$ : A New Method for Characterizing Electron Traps in the Bulk of $ \hbox{SiO}_{2}/\hbox{high-}\kappa$ Dielectric Stacks

(2008) W. D. Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

(2008) Ce Z. Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Future challenges of flash memory technologies

(2008) Chih-Yuan Lu et al.   MICROELECTRONIC ENGINEERING