Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

(2010) M. Bosman et al.   APPLIED PHYSICS LETTERS

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

(2010) Takashi Ando et al.   APPLIED PHYSICS LETTERS

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks

(2010) Gennadi Bersuker et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide

(2010) W. J. Maeng et al.   JOURNAL OF APPLIED PHYSICS

Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack

(2010) Ming Di et al.   JOURNAL OF APPLIED PHYSICS

Interaction of La2O3 capping layers with HfO2 gate dielectrics

(2009) M. Copel et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

X-ray standing waves and hard X-ray photoelectron spectroscopy at the insertion device beamline ID32

(2009) Jörg Zegenhagen et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks

(2009) M. Charbonnier et al.   MICROELECTRONIC ENGINEERING

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

(2009) Hsing-Huang Tseng et al.   MICROELECTRONIC ENGINEERING

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

(2008) K. Kakushima et al.   APPLIED SURFACE SCIENCE

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

(2008) K. Kakushima et al.   SOLID-STATE ELECTRONICS