High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Published 2008 View Full Article

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Title
High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 19, Pages 192111
Publisher
AIP Publishing
Online
2008-05-16
DOI
10.1063/1.2928224
References
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