Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

Published 2010 View Full Article

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Title
Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%
Authors
Keywords
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Journal
JOURNAL OF CRYSTAL GROWTH
Volume 315, Issue 1, Pages 263-266
Publisher
Elsevier BV
Online
2010-08-11
DOI
10.1016/j.jcrysgro.2010.08.006

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