The effects of Si doping on dislocation movement and tensile stress in GaN films

Dislocation movement in GaN films

(2010) M. A. Moram et al.   APPLIED PHYSICS LETTERS

The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

(2010) M.A. Moram et al.   JOURNAL OF ELECTRONIC MATERIALS

Defects and dislocations in MgO: atomic scale models of impurity segregation and fast pipe diffusion

(2010) Feiwu Zhang et al.   JOURNAL OF MATERIALS CHEMISTRY

Dislocations and their reduction in GaN

(2010) S. E. Bennett   MATERIALS SCIENCE AND TECHNOLOGY

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

(2009) Michelle A. Moram et al.   ADVANCED MATERIALS

On the origin of threading dislocations in GaN films

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

(2008) M. Albrecht et al.   APPLIED PHYSICS LETTERS

The effect of wafer curvature on x-ray rocking curves from gallium nitride films

(2008) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

The influence of coalescence time on unintentional doping in GaN/sapphire

(2008) S. Das Bakshi et al.   JOURNAL OF CRYSTAL GROWTH

Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells

(2008) F Carosella et al.   JOURNAL OF PHYSICS-CONDENSED MATTER