4.6 Article

Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2979686

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Funding

  1. Department of Energy
  2. Office of Basic Energy Science

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We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon. (c) 2008 American Institute of Physics.

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