Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages H105-H108Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3066081
Keywords
bonds (chemical); gallium compounds; hydrogen; III-V semiconductors; ion implantation; sapphire; semiconductor thin films; stress effects
Funding
- German Federal Ministry of Education and Research (BMBF) [01BU0624]
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Heterointegration of thin layers obtained from freestanding GaN wafers by the Smart-Cut process faces major challenges due to strong wafer bowing. The post-implantation bow was found to range between similar to 40 and 60 mu m for 2 in. wafers, prohibiting any bonding of H-implanted GaN. Here, we demonstrate that stress engineering by back-side implantation is an effective strategy to manipulate the bow to meet the criterion of long-range flatness. Based on our approach, high-quality bonding of a 2 in. freestanding GaN wafer onto sapphire was achieved. An efficient method to transfer thin layers from freestanding GaN is proposed.
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