Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2955832
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We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 degrees C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 degrees C. Extended internal surfaces develop around 550 degrees C leading to the exfoliation of GaN thin layer.
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