Polarization doping for III-nitride optoelectronics

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

(2012) Shibin Li et al.   APPLIED PHYSICS LETTERS

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

(2012) Santino D. Carnevale et al.   NANO LETTERS

Theoretical study of polarization-doped GaN-based light-emitting diodes

(2011) L. Zhang et al.   APPLIED PHYSICS LETTERS

Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

(2011) L. Zhang et al.   APPLIED PHYSICS LETTERS

Demonstration of forward inter-band tunneling in GaN by polarization engineering

(2011) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer

(2011) Zhiqiang Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition

(2011) Sang-Jun Lee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

(2011) Joachim Piprek   OPTICAL AND QUANTUM ELECTRONICS

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

(2010) Martin F. Schubert   PHYSICAL REVIEW B

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg(0≤x

(2009) S. Nikishin et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS