Demonstration of forward inter-band tunneling in GaN by polarization engineering

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

(2010) C. Bayram et al.   APPLIED PHYSICS LETTERS

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

(2010) Martin F. Schubert   PHYSICAL REVIEW B

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

(2009) N. Akopian et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS