标题
Polarization doping for III-nitride optoelectronics
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 210, Issue 7, Pages 1369-1376
出版商
Wiley
发表日期
2013-03-18
DOI
10.1002/pssa.201228614
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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- Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg(0≤x
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- Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures
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