A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts

(2017) Chunsen Liu et al.   Small

Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

(2016) Yan Chen et al.   ACS Applied Materials & Interfaces

High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors

(2016) Dingshan Zheng et al.   ADVANCED FUNCTIONAL MATERIALS

Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

(2016) Changjian Zhou et al.   ADVANCED FUNCTIONAL MATERIALS

Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure

(2016) Takuhei Kobayashi et al.   APPLIED PHYSICS LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Toward High-Performance Top-Gate Ultrathin HfS2Field-Effect Transistors by Interface Engineering

(2016) Kai Xu et al.   Small

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer

(2015) Young Tack Lee et al.   ACS Nano

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

(2015) Dong-Ho Kang et al.   ACS Nano

Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

(2015) Xudong Wang et al.   ADVANCED MATERIALS

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

(2015) Q. Cao et al.   SCIENCE

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

(2015) David J. Perello et al.   Nature Communications

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration

(2014) Chang-Hsiao Chen et al.   2D Materials

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

(2013) Weijie Zhao et al.   Nanoscale

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

(2013) H. Sahin et al.   PHYSICAL REVIEW B

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

(2013) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

(2012) Deep Jariwala et al.   CHEMICAL SOCIETY REVIEWS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

A roadmap for graphene

(2012) K. S. Novoselov et al.   NATURE

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator

(2011) Jinhua Li et al.   ADVANCED MATERIALS

Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

(2011) Yang Chai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Hysteresis of Electronic Transport in Graphene Transistors

(2010) Haomin Wang et al.   ACS Nano

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

High electric tunability of relaxor ferroelectric Langmuir–Blodgett terpolymer films

(2008) J. L. Wang et al.   APPLIED PHYSICS LETTERS