Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts
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Title
Various and Tunable Transport Properties of WSe2
Transistor Formed by Metal Contacts
Authors
Keywords
-
Journal
Small
Volume 13, Issue 18, Pages 1604319
Publisher
Wiley
Online
2017-03-11
DOI
10.1002/smll.201604319
References
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Related references
Note: Only part of the references are listed.- 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
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- Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
- (2015) Ming-Hui Chiu et al. Nature Communications
- Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
- (2014) Min Sup Choi et al. ACS Nano
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- (2014) Yexin Deng et al. ACS Nano
- Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
- (2014) Rui Cheng et al. NANO LETTERS
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- (2014) Marco M. Furchi et al. NANO LETTERS
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- (2014) Steven Chuang et al. NANO LETTERS
- Atomically thin p–n junctions with van der Waals heterointerfaces
- (2014) Chul-Ho Lee et al. Nature Nanotechnology
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- (2014) Xiaoping Hong et al. Nature Nanotechnology
- Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
- (2013) Cheng Gong et al. APPLIED PHYSICS LETTERS
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
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- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
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