Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Title
Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
Authors
Keywords
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Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 31, Issue 1, Pages 01A134
Publisher
American Vacuum Society
Online
2012-12-07
DOI
10.1116/1.4769207

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