Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Published 2009 View Full Article

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Title
Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
Authors
Keywords
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Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 156, Issue 11, Pages G173
Publisher
The Electrochemical Society
Online
2009-10-06
DOI
10.1149/1.3205868
References
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