Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

(2014) Giovanni Verzellesi et al.   IEEE ELECTRON DEVICE LETTERS

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

(2014) Michael J. Uren et al.   IEEE ELECTRON DEVICE LETTERS

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

(2014) Peter Lagger et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

(2014) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

(2013) Marco Silvestri et al.   APPLIED PHYSICS LETTERS

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

(2013) Davide Bisi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

(2013) D. O. Demchenko et al.   PHYSICAL REVIEW LETTERS

Defect identification in semiconductors with positron annihilation: Experiment and theory

(2013) Filip Tuomisto et al.   REVIEWS OF MODERN PHYSICS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

(2010) F. J. Xu et al.   JOURNAL OF APPLIED PHYSICS