Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel
Published 2011 View Full Article
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Title
Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel
Authors
Keywords
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Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 9, Pages H892
Publisher
The Electrochemical Society
Online
2011-07-15
DOI
10.1149/1.3609842
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