Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel
出版年份 2011 全文链接
标题
Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 9, Pages H892
出版商
The Electrochemical Society
发表日期
2011-07-15
DOI
10.1149/1.3609842
参考文献
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