Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Title
Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 23, Pages 232903
Publisher
AIP Publishing
Online
2010-06-11
DOI
10.1063/1.3452339

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