Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

Published 2009 View Full Article

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Title
Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 15, Pages 153502
Publisher
AIP Publishing
Online
2009-10-13
DOI
10.1063/1.3247881
References
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