Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymer

Title
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymer
Authors
Keywords
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Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 24, Pages 245101
Publisher
IOP Publishing
Online
2009-11-26
DOI
10.1088/0022-3727/42/24/245101

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