Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time

Surface Defects and Passivation of Ge and III–V Interfaces

(2011) Michel Houssa et al.   MRS BULLETIN

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

(2010) Rahul Suri et al.   APPLIED PHYSICS LETTERS

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

(2010) Dong Chan Suh et al.   APPLIED PHYSICS LETTERS

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

(2008) C. Y. Kim et al.   APPLIED PHYSICS LETTERS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS