Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics

Reduction of Electrical Defects in Atomic Layer Deposited HfO2Films by Al Doping

(2010) Tae Joo Park et al.   CHEMISTRY OF MATERIALS

Increasing permittivity in HfZrO thin films by surface manipulation

(2009) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

Dielectric relaxation of lanthanum doped zirconium oxide

(2009) C. Z. Zhao et al.   JOURNAL OF APPLIED PHYSICS

Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates

(2009) S. Abermann et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

(2009) S. Dueñas et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition

(2009) Kaupo Kukli et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

(2009) W. Weinreich et al.   MICROELECTRONIC ENGINEERING

Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures

(2009) Indrek Jõgi et al.   MICROELECTRONIC ENGINEERING

The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

(2009) Ch. Wenger et al.   THIN SOLID FILMS

Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

(2008) K. B. Jinesh et al.   APPLIED PHYSICS LETTERS

Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces

(2008) E. Lipp et al.   APPLIED PHYSICS LETTERS

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

(2008) P. R. Chalker et al.   APPLIED PHYSICS LETTERS

Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

(2008) K. B. Jinesh et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

(2008) Jaakko Niinistö et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Maximizing performance for higher K gate dielectrics

(2008) John Robertson   JOURNAL OF APPLIED PHYSICS

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

(2008) Jaakko Niinistö et al.   JOURNAL OF MATERIALS CHEMISTRY

Deposition temperature effect on electrical properties and interface of high-kZrO2capacitor

(2008) Joo-Hyung Kim et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition

(2008) Woong-Sun Kim et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor

(2008) Joo-Hyung Kim et al.   THIN SOLID FILMS