Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures

Published 2009 View Full Article

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Title
Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 2, Pages 144-149
Publisher
Elsevier BV
Online
2009-07-04
DOI
10.1016/j.mee.2009.06.032

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