A selector device based on graphene–oxide heterostructures for memristor crossbar applications

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

(2014) Yuchao Yang et al.   ADVANCED MATERIALS

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

(2014) Min Qian et al.   ADVANCED MATERIALS

On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

(2013) R. Mandapati et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Graphene: An Emerging Electronic Material

(2012) Nathan O. Weiss et al.   ADVANCED MATERIALS

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

(2012) Jong Ho Lee et al.   APPLIED PHYSICS LETTERS

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

(2011) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Observation of two resistance switching modes in TiO2memristive devices electroformed at low current

(2011) Feng Miao et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

(2010) Wenzhong Bao et al.   Nano Research

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Controlled ripple texturing of suspended graphene and ultrathin graphite membranes

(2009) Wenzhong Bao et al.   Nature Nanotechnology

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS