Effect of postdeposition annealing on the electrical properties of β-Ga2O3thin films grown onp-Si by plasma-enhanced atomic layer deposition

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Title
Effect of postdeposition annealing on the electrical properties of β-Ga2O3thin films grown onp-Si by plasma-enhanced atomic layer deposition
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 32, Issue 4, Pages 041504
Publisher
American Vacuum Society
Online
2014-05-22
DOI
10.1116/1.4875935

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