Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

(2012) Pradipta K. Nayak et al.   APPLIED PHYSICS LETTERS

FeZnO-Based Resistive Switching Devices

(2012) Yang Zhang et al.   JOURNAL OF ELECTRONIC MATERIALS

Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

(2012) R. Mahapatra et al.   JOURNAL OF ELECTRONIC MATERIALS

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

(2011) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effects of Deposition Power and Oxygen Partial Pressure on Low-Temperature-Processed In-Ga-Zn-O Thin-Film Transistors

(2011) Sang Ouk Ryu   Journal of Nanoelectronics and Optoelectronics

A New Transparent Conductor: Silver Nanowire Film Buried at the Surface of a Transparent Polymer

(2010) Xiao-Yan Zeng et al.   ADVANCED MATERIALS

Realization of forming-free ZnO-based resistive switching memory by controlling film thickness

(2010) Qinan Mao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament

(2010) Jubong Park et al.   MICROELECTRONIC ENGINEERING

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

(2009) Yanli Pei et al.   APPLIED PHYSICS LETTERS

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES