Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

Title
Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 3, Pages 033118
Publisher
AIP Publishing
Online
2009-07-25
DOI
10.1063/1.3189085

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search