Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Published 2012 View Full Article

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Title
Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
Authors
Keywords
-
Journal
Applied Physics Express
Volume 5, Issue 9, Pages 095503
Publisher
IOP Publishing
Online
2012-09-07
DOI
10.1143/apex.5.095503

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