Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates

Planar semipolar (101¯1) GaN on (112¯3) sapphire

(2010) Stephan Schwaiger et al.   APPLIED PHYSICS LETTERS

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

(2010) P. de Mierry et al.   APPLIED PHYSICS LETTERS

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate

(2009) Narihito Okada et al.   Applied Physics Express

Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate

(2009) Sung-Min Hwang et al.   APPLIED PHYSICS LETTERS

M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy

(2008) R. Armitage et al.   APPLIED PHYSICS LETTERS

Metalorganic Vapor Phase Epitaxy Growth ofm-Plane GaN Using LiAlO2Substrates

(2008) An-Ting Cheng et al.   JAPANESE JOURNAL OF APPLIED PHYSICS