Analysis of doping induced wafer bow during GaN:Si growth on sapphire

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

(2011) Armin Dadgar et al.   Applied Physics Express

Strain in Si doped GaN and the Fermi level effect

(2011) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

The effects of Si doping on dislocation movement and tensile stress in GaN films

(2011) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

(2011) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Dislocation movement in GaN films

(2010) M. A. Moram et al.   APPLIED PHYSICS LETTERS

Strain relaxation in AlGaN multilayer structures by inclined dislocations

(2009) D. M. Follstaedt et al.   JOURNAL OF APPLIED PHYSICS

Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

(2008) F. Brunner et al.   JOURNAL OF CRYSTAL GROWTH