Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Title
Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 18, Pages 183505
Publisher
AIP Publishing
Online
2012-11-06
DOI
10.1063/1.4765356

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