A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

Threshold-Switching Delay Controlled by $\hbox{1}/f$ Current Fluctuations in Phase-Change Memory Devices

(2010) Simone Lavizzari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

(2009) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

(2009) Simone Lavizzari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

(2009) G. Betti Beneventi et al.   JOURNAL OF APPLIED PHYSICS

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B