Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

(2013) Mantu K. Hudait et al.   JOURNAL OF APPLIED PHYSICS

Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

(2013) M. K. Hudait et al.   JOURNAL OF APPLIED PHYSICS

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

(2013) M. K. Hudait et al.   JOURNAL OF APPLIED PHYSICS

Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

(2012) Prashanth Paramahans Manik et al.   APPLIED PHYSICS LETTERS

Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

(2012) Qi Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

(2011) Qi Xie et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

(2010) Qi Xie et al.   APPLIED PHYSICS LETTERS

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Formation of an oxide-free Ge∕TiO2 interface by atomic layer deposition on brominated Ge

(2008) Pendar Ardalan et al.   APPLIED PHYSICS LETTERS

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Energy band alignment at TiO2∕Si interface with various interlayers

(2008) M. Perego et al.   JOURNAL OF APPLIED PHYSICS