Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Published 2010 View Full Article

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Title
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages 112905
Publisher
AIP Publishing
Online
2010-09-17
DOI
10.1063/1.3490710
References
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