Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Title
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 1, Pages 013513
Publisher
AIP Publishing
Online
2013-01-05
DOI
10.1063/1.4772781

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started