High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(1 1 1) heterostructures

(2011) P Zaumseil et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Strain relaxation in high Ge content SiGe layers deposited on Si

(2010) G. Capellini et al.   JOURNAL OF APPLIED PHYSICS

Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

(2010) Moustafa El Kurdi et al.   JOURNAL OF APPLIED PHYSICS

Ge-on-Si laser operating at room temperature

(2010) Jifeng Liu et al.   OPTICS LETTERS

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

(2009) J.M. Hartmann et al.   JOURNAL OF CRYSTAL GROWTH

Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

(2009) Giovanni Pizzi et al.   NANOTECHNOLOGY

Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

(2009) S. Kobayashi et al.   THIN SOLID FILMS